DocumentCode :
585239
Title :
A full-wave analysis of the parasitic coupling between right-angle mitered bends microstrip discontinuities
Author :
Cicchetti, Renato ; Testa, Orlandino
Author_Institution :
Dept. of Inf. Eng., Electron. & Telecommun., Sapienza Univ. of Rome, Rome, Italy
fYear :
2012
fDate :
17-21 Sept. 2012
Firstpage :
1
Lastpage :
4
Abstract :
A full-wave analysis of the parasitic coupling effects between right-angle mitered bends microstrip discontinuities is presented. The full-wave analysis is performed by means of the spectral domain approach (SDA) which allows to include the effects caused by the surface and volume waves excited by the discontinuity. Using the computed field quantities, the scattering parameters of the structure are obtained and used to derived an equivalent circuit suitable to model the dispersive effects and the parasitic coupling caused by the microstrip discontinuities. The analysis is carried out by varying the electrical and geometrical parameters that characterize the considered structures.
Keywords :
S-parameters; equivalent circuits; microstrip discontinuities; SDA; dispersive effects; electrical parameters; equivalent circuit; full-wave analysis; geometrical parameters; parasitic coupling effects; right-angle mitered bends microstrip discontinuity; scattering parameters; spectral domain approach; surface waves; volume waves; Couplings; Electromagnetics; Equivalent circuits; Integrated circuit modeling; Microstrip; Scattering parameters; equivalent circuit; microstrip discontinuities; parasitic coupling effects; right-angle mitered bend;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electromagnetic Compatibility (EMC EUROPE), 2012 International Symposium on
Conference_Location :
Rome
ISSN :
2325-0356
Print_ISBN :
978-1-4673-0718-5
Type :
conf
DOI :
10.1109/EMCEurope.2012.6396671
Filename :
6396671
Link To Document :
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