Title :
Transient analysis and simulation of a high power IGBT non-destructive tester
Author :
Ahmed, Arif ; Coulbeck, Lee ; Castellazzi, Alberto ; Johnson, C.M.
Author_Institution :
Power Semicond. R&D Centre of Zhuzhou CSR Times Electr. Ltd., Dynex Semicond. Ltd., Zhuzhou, China
Abstract :
The study proposes the primary design and transient analysis of an IGBT non-destructive tester. The tester is designed to test IGBTs at voltage and current ratings less than 3.3kV 2.4kA. Due to stray elements, the circuit might oscillate during the different modes of operation and test conditions. These oscillations could cause high stresses to the IGBT switches in the circuit and cause one or more of the switches to fail. A transient analysis is performed taking into account the different operating conditions. Hence the potential for destructive oscillations can be minimized via the proper design of the IGBT gate resistors. Simulation results of a failure case study using spice simulation software are then presented.
Keywords :
design for testability; insulated gate bipolar transistors; nondestructive testing; transient analysis; current ratings; designed to test; destructive oscillations; high power IGBT; nondestructive tester; transient analysis; voltage ratings; Inductance; Insulated gate bipolar transistors; Integrated circuit modeling; Logic gates; Resistance; Switches; Transient analysis; IGBT; non-destructive; simulation; tester;
Conference_Titel :
Power Electronics and Motion Control Conference (EPE/PEMC), 2012 15th International
Conference_Location :
Novi Sad
Print_ISBN :
978-1-4673-1970-6
Electronic_ISBN :
978-1-4673-1971-3
DOI :
10.1109/EPEPEMC.2012.6397191
