Title :
High-power-density versatile DC-DC converter for environmentally friendly data centre
Author :
Hayashi, Yasuhiro
Author_Institution :
NTT Facilities, Inc., Tokyo, Japan
Abstract :
An approach to realize a high-power-density versatile DC-DC converter was proposed for the future 380 V DC distribution network in data centres. The series-parallel circuit topology of 48 V DC-DC converters was applied to develop a 384 V DC-DC converter. Availability of the proposed approach is verified by the high-power-density converter design methodology. To confirm the validity, a prototype of a non-isolated 32 V-48 V boost converter with the efficiency of more than 99 % and the power density of more than 10 W/cm3 was fabricated by using commercially available Gallium Nitride (GaN) power devices. The fabricated converter is commonly available for various converter applications in the 380 V DC network, and this contributes to realize future environmentally friendly data centres.
Keywords :
DC-DC power convertors; III-V semiconductors; computer centres; gallium compounds; wide band gap semiconductors; DC distribution network; GaN; environmentally friendly data centre; gallium nitride power devices; high-power-density converter design methodology; high-power-density versatile DC-DC converter; nonisolated boost converter; series-parallel circuit topology; voltage 32 V to 48 V; voltage 380 V; voltage 384 V; Density measurement; Design methodology; Gallium nitride; Inductors; Power generation; Power system measurements; Switching frequency; DC-DC converter; Gallium Nitride (GaN) power device; Power density;
Conference_Titel :
Power Electronics and Motion Control Conference (EPE/PEMC), 2012 15th International
Conference_Location :
Novi Sad
Print_ISBN :
978-1-4673-1970-6
Electronic_ISBN :
978-1-4673-1971-3
DOI :
10.1109/EPEPEMC.2012.6397322
