DocumentCode
585584
Title
Nanosecond switching of high power laser activated silicon switches
Author
Zucker, O.S. ; Long, J.R. ; Smith, V.L. ; Page, D.J. ; Roberts, J.S.
Author_Institution
Lawrence Livermore Lab., Univ. of California Livermore, Livermore, CA, USA
Volume
1
fYear
1975
fDate
3-5 Nov. 1975
Firstpage
538
Lastpage
552
Abstract
Light activated multilayered silicon semiconductor devices have been used to switch at Megawatt power levels with nanosecond turnon time. Current rate of rise of 700 KA/NS at 10 KAMP, with 1 kV across the load, has been achieved.
Keywords
elemental semiconductors; semiconductor switches; Megawatt power levels; high power laser activated silicon switches; multilayered silicon semiconductor devices; nanosecond switching; nanosecond turnon time; voltage 1 kV; Radiative recombination; Semiconductor device measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Beam Research & Technology, 1975 International Topical Conference on
Conference_Location
Albuquerque, NM
Print_ISBN
0-8493-6926-6
Type
conf
Filename
6397705
Link To Document