Title :
Characterization of Class-F Power Amplifier With Wide Amplitude and Phase Bandwidth for Outphasing Architecture
Author :
Taesong Hwang ; Azadet, Kamran ; Wilson, Ross S. ; Jenshan Lin
Author_Institution :
Electr. & Comput. Eng, Univ. of Florida, Gainesville, FL, USA
Abstract :
A 2.14 GHz gallium nitride class-F power amplifier (PA) achieving both high efficiency and phase linearity over a wide frequency range is presented. The broadband PA is designed as one channel of outphasing architecture in cellular base-stations and analyzed in amplitude and phase domains. In amplitude domain, the PA exhibits measured maximum power added efficiency (PAE) of 80.1% with an output power of 40.7 dBm at 2 GHz. The PA achieves PAE higher than 55% over 500 MHz frequency range. The optimum second-harmonic load impedance enables the broadband operation. In phase domain, phase linearity of the PA is characterized by using phase modulation signals derived from single-carrier 10 MHz, two-carrier 40 MHz, and two-carrier 60 MHz long term evolution signals with 6.5 dB peak-to-average power ratio.
Keywords :
III-V semiconductors; UHF power amplifiers; gallium compounds; phase modulation; wide band gap semiconductors; wideband amplifiers; GaN; Long Term Evolution signals; amplitude domains; broadband PA; cellular base-stations; class-F power amplifier characterization; frequency 10 MHz; frequency 2 GHz; frequency 2.14 GHz; frequency 40 MHz; frequency 60 MHz; gallium nitride class-F power amplifier; optimum second-harmonic load impedance; outphasing architecture; phase bandwidth; phase domains; phase linearity; phase modulation signals; Broadband communication; Current measurement; Frequency measurement; Gallium nitride; Linearity; Phase modulation; Power measurement; Class-F PA; GaN; LTE; PAE; outphasing;
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2013.2292929
