DocumentCode :
58668
Title :
Characterization of a Commercially Available Large Area, High Detection Efficiency Single-Photon Avalanche Diode
Author :
Stipcevic, Mario ; Daqing Wang ; Ursin, R.
Author_Institution :
Dept. of Phys., Univ. of California, Santa Barbara, Santa Barbara, CA, USA
Volume :
31
Issue :
23
fYear :
2013
fDate :
Dec.1, 2013
Firstpage :
3591
Lastpage :
3596
Abstract :
We characterize a new commercial, back-illuminated reach-through silicon single-photon avalanche photo diode (SPAD) SAP500 (Laser Components. Inc.), operated in Geiger-mode for purpose of photon counting. We show that for this sensor a significant interplay exists between dark counts, detection efficiency, afterpulsing, excess voltage and operating temperature, sometimes requiring a careful optimization tailored for a specific application. We find that a large flat plateau of sensitive area of about 0.5 mm in diameter, a peak quantum efficiency of 73% at 560 nm and timing precision down to 150 ps full-width at half-maximum are the main distinguishing characteristics of this SPAD.
Keywords :
avalanche photodiodes; elemental semiconductors; photodetectors; photon counting; silicon; Geiger-mode; SAP500; SPAD; Si; afterpulsing; back-illuminated reach-through silicon single-photon avalanche photodiode; commercially available large area high detection efficiency single-photon avalanche diode; dark counts; detection efficiency; excess voltage; operating temperature; optimization; photon counting; quantum efficiency; sensor; timing precision; wavelength 560 nm; Detectors; Frequency measurement; Measurement by laser beam; Photonics; Temperature distribution; Temperature measurement; Voltage control; Photodetectors; photodiodes; quantum communication; quantum detectors;
fLanguage :
English
Journal_Title :
Lightwave Technology, Journal of
Publisher :
ieee
ISSN :
0733-8724
Type :
jour
DOI :
10.1109/JLT.2013.2286422
Filename :
6637026
Link To Document :
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