Title :
DC temperature measurements for power gain monitoring in RF power amplifiers
Author :
Altet, Josep ; Mateo, D. ; Gomez, David ; Perpina, Xavier ; Vellvehi, Miquel ; Jorda, Xavier
Author_Institution :
Electron. Eng. Dept., Univ. Politec. de Catalunya, Barcelona, Spain
Abstract :
In this paper we demonstrate that the steady state temperature increase due to the power dissipated by the circuit under test can be used as observable to test the gain of a 2GHz linear class A Power Amplifier. As a proof of concept, we use two strategies to monitor the temperature: a temperature sensor embedded within the same silicon die, which can be used for a BIST approach, and an Infra Red camera, with applications to failure analysis and product debugging.
Keywords :
failure analysis; power amplifiers; DC temperature measurement; RF power amplifiers; circuit under test; failure analysis; infrared camera; power dissipated; power gain monitoring; product debugging; silicon die; steady state temperature; temperature sensor; Couplings; Radio frequency; Silicon; Temperature measurement; Temperature sensors; Transducers;
Conference_Titel :
Test Conference (ITC), 2012 IEEE International
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4673-1594-4
DOI :
10.1109/TEST.2012.6401589
