Title :
A 135GHz single-ended mixer in 0.13μm SiGe HBT for high-speed demodulation
Author :
Sanming Hu ; Yong-Zhong Xiong ; Lei Wang ; Bo Zhang
Author_Institution :
Inst. of Microelectron., A*STAR (Agency for Sci., Technol. & Res.), Singapore, Singapore
Abstract :
This paper presents a millimeter-wave (mmWave) mixer in 0.13μm SiGe HBT technology. The single-ended mixer is designed to down convert modulated mmWave signals with high speed up to 10Gbps. The on-wafer measured results show that, the fabricated 0.7mm × 0.5mm mixer exhibits a 10dB return-loss bandwidth covering the whole D-band (110-170GHz) at RF input port.
Keywords :
demodulation; heterojunction bipolar transistors; millimetre wave bipolar transistors; millimetre wave mixers; HBT technology; RF input port; frequency 110 GHz to 170 GHz; high-speed demodulation; loss 10 dB; millimeter-wave mixer; modulated mmWave signal downconversion; single-ended mixer; size 0.13 mum; Millimeter wave communication; Mixers; Radio frequency; Silicon germanium; Transistors; Demodulator; down conversion; high-speed communication; millimeter-wave; mixer;
Conference_Titel :
Radio-Frequency Integration Technology (RFIT), 2012 IEEE International Symposium on
Conference_Location :
Singapore
Print_ISBN :
978-1-4673-2303-1
DOI :
10.1109/RFIT.2012.6401611
