DocumentCode :
586916
Title :
A 4.89-GHz low-phase-noise VCO in CMOS technology
Author :
Yutong Ying ; Lu Huang ; Li Cai ; Fujiang Lin
Author_Institution :
Dept. of Electron. Sci. & Technol., USTC, Hefei, China
fYear :
2012
fDate :
21-23 Nov. 2012
Firstpage :
198
Lastpage :
200
Abstract :
A 4.06-4.89 GHz, low phase noise symmetric complementary voltage controlled oscillator (VCO), which features an optimized capacitive feedback technique combined with RC source degeneration, is presented in this paper. Fabricated in 180nm CMOS technology, the proposed VCO obtained a measured corner frequency of 15-80 KHz. The measured phase noise at 1MHz offset from the 4.89GHz carrier is -119dBc/Hz. Occupying 0.15mm2 in 180nm CMOS technology under 2.5mW power consumption, an area-normalized figure-of-merit (FOMA) of 197.1dBc/Hz has been achieved.
Keywords :
CMOS integrated circuits; circuit feedback; phase noise; power consumption; voltage-controlled oscillators; CMOS technology; FOMA; RC source degeneration; area-normalized figure-of-merit; frequency 1 MHz; frequency 15 kHz to 80 kHz; frequency 4.06 GHz to 4.89 GHz; low phase noise symmetric complementary voltage controlled oscillator; low-phase-noise VCO; measured phase noise; optimized capacitive feedback technique; power 2.5 mW; power consumption; size 180 nm; 1f noise; CMOS integrated circuits; CMOS technology; Phase noise; Tuning; Voltage-controlled oscillators; Wireless communication; VCO; capacitive feedback; low phase noise; low power; source degeneration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radio-Frequency Integration Technology (RFIT), 2012 IEEE International Symposium on
Conference_Location :
Singapore
Print_ISBN :
978-1-4673-2303-1
Type :
conf
DOI :
10.1109/RFIT.2012.6401659
Filename :
6401659
Link To Document :
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