Title :
Graphene-based spin diode and transistor
Author :
Zeng, M.G. ; Shen, L. ; Feng, Y.P.
Author_Institution :
Dept. of Phys., Nat. Univ. of Singapore, Singapore, Singapore
fDate :
Oct. 31 2012-Nov. 2 2012
Abstract :
We demonstrate that spin polarization of a current in a graphene-based two-terminal device can be tuned by a source-drain voltage and the device functions as a bipolar spin diode. This is possible because of a symmetry selection rule. These properites allow the designs of spin transistor.
Keywords :
diodes; electric current; graphene; magnetoelectronics; transistors; C; device functions; graphene-based bipolar spin diode; graphene-based two-terminal device; source-drain voltage; spin transistor design; symmetry selection rule; Cobalt; Educational institutions; Transistors; graphene; spin diode; spin transistor;
Conference_Titel :
APMRC, 2012 Digest
Conference_Location :
Singapore
Print_ISBN :
978-1-4673-4734-1
