DocumentCode :
587071
Title :
Research of temperature rise on IGBT module and DC busbar for a single-phase PWM rectifier
Author :
Yifeng Zhu ; Qiongxuan Ge ; Lu Zhao
Author_Institution :
Key Lab. of Power Electron. & Electr. Drive, Inst. of Electr. Eng., Beijing, China
fYear :
2012
fDate :
21-24 Oct. 2012
Firstpage :
1
Lastpage :
4
Abstract :
In the application of power converters constructed by IGBTs, the temperature rise of IGBTs is often considered to ensure safe operation of the system. The thermal distribution of a single-phase Pulse Width Modulation (PWM) rectifier is studied here. Based on accurate power dissipation of IGBTs and DC busbar, a thermal circuit model and a Finite Element Method (FEM) model are given to solve the temperature rise on the IGBTs and DC busbar. The computational results and simulation results are in agreement with the measured value tested on the 25kW single-phase PWM rectifier, which demonstrates the effectiveness of these approaches.
Keywords :
PWM rectifiers; busbars; finite element analysis; insulated gate bipolar transistors; power bipolar transistors; DC busbar; FEM model; IGBT module; finite element method model; power 25 kW; single-phase PWM rectifier; single-phase pulse width modulation rectifier; temperature rise; thermal circuit model; Computational modeling; Finite element methods; Heating; Insulated gate bipolar transistors; Pulse width modulation; Rectifiers; Temperature distribution; Busbar; IGBT; Rectifier; Temperature rise;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrical Machines and Systems (ICEMS), 2012 15th International Conference on
Conference_Location :
Sapporo
Print_ISBN :
978-1-4673-2327-7
Type :
conf
Filename :
6401842
Link To Document :
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