Title :
Power losses in two- and three-level three phase photovoltaic inverters equipped with IGBTs
Author :
Zhiping Chen ; Liqiang Yuan ; Zhengming Zhao ; Xiaoying Sun
Author_Institution :
Dept. of Electr. Eng., Tsinghua Univ., Beijing, China
Abstract :
To increase efficiency is an essential target in photovoltaic (PV) power generation system. The losses of the whole system consist of several parts. This paper focuses on the losses of the hard-switching devices. An improved method to calculate the device losses is proposed. And influences of different factors like DC link voltage, input power, switching frequency and power factor on the losses are considered. Then this paper compares the losses of conventional two-level inverter and of diode-clamped three-level inverter to provide the evaluation of power losses under different working conditions. This is helpful to design and optimize a certain PV inverter. Calculating results based on an actual three phase 10kW PV inverter are presented.
Keywords :
insulated gate bipolar transistors; invertors; losses; power factor; solar cells; IGBT; PV power generation system; diode-clamped three-level inverter; hard-switching devices losses; photovoltaic power generation system; power factor; power losses; switching frequency; three-level three phase photovoltaic inverters; two-level three phase photovoltaic inverters; Energy loss; Insulated gate bipolar transistors; Inverters; Semiconductor diodes; Switches; Switching loss; Topology; IGBT; Loss-calculation; photovoltaic; three-level;
Conference_Titel :
Electrical Machines and Systems (ICEMS), 2012 15th International Conference on
Conference_Location :
Sapporo
Print_ISBN :
978-1-4673-2327-7
