DocumentCode :
5873
Title :
Interface State Artefact in Long Gate-Length AlGaN/GaN HEMTs
Author :
Waller, William M. ; Karboyan, Serge ; Uren, Michael J. ; Lee, Kean Boon ; Houston, Peter A. ; Wallis, David J. ; Guiney, Ivor ; Humphreys, Colin J. ; Kuball, Martin
Author_Institution :
H.H. Wills Phys. Lab., Univ. of Bristol, Bristol, UK
Volume :
62
Issue :
8
fYear :
2015
fDate :
Aug. 2015
Firstpage :
2464
Lastpage :
2469
Abstract :
Dispersion in capacitance and conductance measurements in AlGaN/GaN high-electron mobility transistors is typically interpreted as resulting from interface states. Measurements on varying gate-length devices and a model of an interface-trap-free device are used to demonstrate that the distributed-resistance-induced dispersion is significant for 1-MHz measurements if the gate length exceeds ~10 μm. Hence, interface state density measurements using the conductance technique need to use shorter gate-length devices in order to avoid this artefact.
Keywords :
III-V semiconductors; aluminium compounds; capacitance measurement; electric admittance measurement; gallium compounds; high electron mobility transistors; semiconductor device measurement; wide band gap semiconductors; AlGaN-GaN; HEMT; capacitance measurements; conductance measurements; conductance technique; distributed-resistance-induced dispersion; frequency 1 MHz; high-electron mobility transistors; interface state artefact; interface state density measurements; interface-trap-free device; varying gate-length devices; Aluminum gallium nitride; Capacitance; Gallium nitride; HEMTs; Logic gates; MODFETs; Resistance; AlGaN/GaN high-electron mobility transistor (HEMT); conductance method; interface traps; series resistance; series resistance.;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2015.2444911
Filename :
7151808
Link To Document :
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