DocumentCode :
587707
Title :
A 2.1 µW 76 dB SNDR DT-ΔΣ modulator for medical implant devices
Author :
Fazli Yeknami, Ali ; Alvandpour, Atila
Author_Institution :
Dept. of Electr. Eng., Linkoping Univ., Linkoping, Sweden
fYear :
2012
fDate :
12-13 Nov. 2012
Firstpage :
1
Lastpage :
4
Abstract :
This paper presents a low-power 2nd-order discrete-time (DT) ΔΣ analog-to-digital converter (ADC) aimed for medical implant devices. The designed ΔΣ modulator with two active integrators (filters) employs power-efficient two-stage load-compensated OTAs with minimal load and rail-to-rail output swing, which provides higher power-efficiency than the two-stage Miller OTA. The modulator, implemented in a 65nm CMOS technology with a core area of 0.033 mm2, achieves 76-dB peak SNDR over a 500 Hz signal bandwidth, while consuming 2.1 μW from a 0.9 V supply voltage. Compared to previously reported modulators for such signal bandwidths, the achieved performance (FOM of 0.4 pJ/step) make the presented modulator one of the best among sub-1-V modulators in term of most commonly used figure of merit.
Keywords :
CMOS integrated circuits; active filters; analogue-digital conversion; biomedical electronics; delta-sigma modulation; discrete time filters; integrated circuit design; operational amplifiers; prosthetics; ADC; CMOS technology; DT-ΔΣ analog-to-digital modulator; SNDR; active integrator filter; figure of merit; gain 76 dB; low-power 2nd-order discrete-time system; medical implant device; power 2.1 muW; power-efficiency; power-efficient two-stage load-compensated OTA; rail-to-rail output swing; signal bandwidth; size 65 nm; two-stage Miller OTA; voltage 0.9 V; voltage 1 V; Bandwidth; CMOS integrated circuits; Capacitors; Clocks; Modulation; Noise; Power demand;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
NORCHIP, 2012
Conference_Location :
Cpenhagen
Print_ISBN :
978-1-4673-2221-8
Electronic_ISBN :
978-1-4673-2222-5
Type :
conf
DOI :
10.1109/NORCHP.2012.6403118
Filename :
6403118
Link To Document :
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