DocumentCode :
587817
Title :
A 1.3 pJ/bit energy-efficient ultra-low power on-off mode oscillator using an InP-based quantum-effect tunneling device
Author :
Jooseok Lee ; Jongwon Lee ; Jaehong Park ; Kyounghoon Yang
Author_Institution :
Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol. (KAIST), Daejeon, South Korea
fYear :
2012
fDate :
27-30 Aug. 2012
Firstpage :
29
Lastpage :
31
Abstract :
A low power on-off mode oscillator is demonstrated by using an InP-based RTD. In order to achieve the low power operation, the NDC (negative differential conductance) characteristic at a low voltage of the RTD is used for RF signal generation. The implemented RTD-based oscillator by using an InP-based RTD/HBT MMIC technology shows low power consumption of 1.3 mW at an oscillation frequency of 5.8 GHz. The RTD-based oscillator operates in an on-off mode with a high data rate of 1 Gb/s. The obtained energy efficiency of 1.3 pJ/bit is found to be the best reported up to date.
Keywords :
III-V semiconductors; indium compounds; microwave oscillators; resonant tunnelling diodes; InP-based RTD-HBT MMIC technology; InP-based quantum effect tunneling device; NDC; RF signal generation; RTD-based oscillator; bit rate 1 Gbit/s; energy efficiency; frequency 5.8 GHz; negative differential conductance; on-off mode oscillator; power 1.3 mW; resonant tunnelling diodes; Energy efficiency; Heterojunction bipolar transistors; Oscillators; Power demand; Temperature measurement; Transmitters; Wireless communication; microwave oscillator; negative differential resistance circuit; resonant tunneling diode;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials (IPRM), 2012 International Conference on
Conference_Location :
Santa Barbara, CA
ISSN :
1092-8669
Print_ISBN :
978-1-4673-1725-2
Type :
conf
DOI :
10.1109/ICIPRM.2012.6403310
Filename :
6403310
Link To Document :
بازگشت