Title :
Source-drain scaling of ion-implanted InAs/AlSb HEMTs
Author :
Moschetti, Giuseppe ; Nilsson, Per-Ake ; Hallen, Anders ; Desplanque, Ludovic ; Wallart, Xavier ; Grahn, Jan
Author_Institution :
Dept. of Microtechnol. & Nanosci., Chalmers Univ. of Technol., Göteborg, Sweden
Abstract :
We report on the lateral scaling of true planar InAs/AlSb high electron mobility transistors (HEMTs) based on ion implantation for device isolation. When reducing the source drain distance, dsd, from 2.5 μm to 1 μm, the HEMTs showed up to 56% higher maximum drain current, 23% higher peak transconductance and fT of 185 GHz (+32%). A trade-off in the lateral scaling is needed due to increased gate leakage current and pinch-off degradation for dsd below 1.5 μm. The ability to withstand oxidation of the InAs/AlSb heterostructure makes the planar technology based on ion implantation extremely promising for MMIC integration of InAs/AlSb HEMTs.
Keywords :
III-V semiconductors; aluminium compounds; electric admittance; high electron mobility transistors; indium compounds; ion implantation; isolation technology; leakage currents; oxidation; semiconductor doping; semiconductor heterojunctions; InAs-AlSb; InAs-AlSb heterostructure oxidation; MMIC integration; device isolation; frequency 185 GHz; gate leakage current; ion implantation; ion-implanted InAs-AlSb high electron mobility transistors; lateral scaling; maximum drain current; peak transconductance; pinch-off degradation; planar InAs-AlSb high electron mobility transistors; planar technology; source drain distance; source-drain scaling; HEMTs; Ion implantation; Logic gates; MMICs; MODFETs; Oxidation; Resistance; InAs/AlSb HEMT; MMIC; ion implantation; lateral scaling; low-power; oxidation resistant;
Conference_Titel :
Indium Phosphide and Related Materials (IPRM), 2012 International Conference on
Conference_Location :
Santa Barbara, CA
Print_ISBN :
978-1-4673-1725-2
DOI :
10.1109/ICIPRM.2012.6403318
