DocumentCode :
587825
Title :
High efficiency and broad-band operation of monolithically integrated W-Band HBV frequency tripler
Author :
Malko, Aleksandra ; Bryllert, Tomas ; Vukusic, Josip ; Stake, Jan
Author_Institution :
Dept. of Microtechnol. & Nanosci., Chalmers Univ. of Technol., Gothenburg, Sweden
fYear :
2012
fDate :
27-30 Aug. 2012
Firstpage :
92
Lastpage :
94
Abstract :
We report on a state-of-the-art monolithically integrated heterostructure barrier varactor (HBV) frequency tripler operating in the W-band frequency range. The device utilizes series connection of four HBV diode mesas, with total 12 barriers, and a cross section area of 700 μm2. The presented tripler withstands 800 mW input power, while delivering 185 mW of output power at 107 GHz. The corresponding conversion efficiency was measured to be 23% and the circuit exhibited 15% 3-dB bandwidth.
Keywords :
frequency multipliers; millimetre wave diodes; varactors; HBV diode mesas; frequency 102 GHz; monolithically integrated W-Band HBV frequency tripler; monolithically integrated W-Band heterostructure barrier varactor frequency tripler; power 800 mW; Bandwidth; Indium gallium arsenide; Indium phosphide; Power amplifiers; Power generation; Varactors; III–V semiconductors; frequency multipliers; heterostructure barrier varactors (HBVs); millimeter wave diodes; power sources; varactors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials (IPRM), 2012 International Conference on
Conference_Location :
Santa Barbara, CA
ISSN :
1092-8669
Print_ISBN :
978-1-4673-1725-2
Type :
conf
DOI :
10.1109/ICIPRM.2012.6403327
Filename :
6403327
Link To Document :
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