Title :
A W-band InGaAs PIN-MMIC digital phase-shifter using a switched transmission-line structure
Author :
Jung Gil Yang ; Jooseok Lee ; Kyounghoon Yang
Author_Institution :
Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol. (KAIST), Daejeon, South Korea
Abstract :
This paper describes the design and fabrication of a W-band InGaAs PIN-diode MMIC 4-bit phase shifter based on a switched delay line. In order to achieve low insertion loss and good phase shifting characteristics at W-band, the topology based on a switched delay-line is employed using a thin-film microstrip line structure. The fabricated phase shifter has demonstrated good performances such as an insertion loss less than 12.7 dB at a frequency range of 81 to 85 GHz with an intrinsic chip size of 1.93 × 0.80 mm2. To our knowledge, this is the first InGaAs PIN MMIC digital phase shifter demonstrated up to W-band.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; microstrip lines; millimetre wave phase shifters; p-i-n diodes; thin films; transmission lines; InGaAs; W-band InGaAs PIN-MMIC digital phase-shifter; W-band InGaAs PIN-diode; frequency 81 GHz to 85 GHz; low insertion loss; switched delay line; switched transmission-line structure; thin-film microstrip line structure; word length 4 bit; Delay lines; Indium gallium arsenide; Loss measurement; MMICs; PIN photodiodes; Phase measurement; Phase shifters; InGaAs; MMIC; PIN-diode; W-band; phase shifter;
Conference_Titel :
Indium Phosphide and Related Materials (IPRM), 2012 International Conference on
Conference_Location :
Santa Barbara, CA
Print_ISBN :
978-1-4673-1725-2
DOI :
10.1109/ICIPRM.2012.6403329