Title :
Novel atomic layer deposited thin film beryllium oxide for InGaAs MOS Devices
Author :
Koh, Dawn ; Yum, J.H. ; Akyol, T. ; Ferrer, D.A. ; Lei, M. ; Hudnall, T.W. ; Downer, M.C. ; Bielawski, C.W. ; Hill, Richard ; Bersuker, Gennadi ; Banerjee, Sanjay K.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Texas at Austin, Austin, TX, USA
Abstract :
Metal-oxide-semiconductor (MOS) capacitors and field-effect-transistors (FET) with atomic layer deposited (ALD) BeO and Al2O3 dielectric layers on InGaAs substrate were fabricated for electrical characterization and device performance comparison. Physical characterization of BeO grown film on Si and InGaAs substrates were done using TEM, AFM, and XPS. BeO devices show decent C-V results, lower dielectric leakage current and interface defect density. High thermal stability, large energy band-gap and strong diffusion barrier properties of BeO along with ALD self-cleaning effects on the interface makes it an excellent candidate for a dielectric or interface passivation layer for InGaAs MOS devices.
Keywords :
III-V semiconductors; MOS capacitors; MOSFET; X-ray photoelectron spectra; alumina; atomic force microscopy; atomic layer deposition; beryllium compounds; diffusion barriers; energy gap; gallium arsenide; high-k dielectric thin films; indium compounds; leakage currents; passivation; thermal stability; transmission electron microscopy; AFM; Al2O3; BeO; BeO devices; BeO diffusion barrier properties; BeO grown film; InGaAs; InGaAs MOS devices; InGaAs substrate; Si; Si substrate; TEM; XPS; atomic layer deposited BeO dielectric layer; atomic layer deposited alumina dielectric layer; atomic layer deposited thin film beryllium oxide; atomic layer deposition self-cleaning effects; device performance; dielectric leakage current; electrical characterization; energy band-gap; interface defect density; interface passivation layer; metal-oxide-semiconductor capacitors; metal-oxide-semiconductor field-effect-transistors; physical characterization; thermal stability; Annealing; Dielectrics; Gallium arsenide; Indium gallium arsenide; MOSFETs; Performance evaluation; Silicon; ALD; Beryllium Oxide; III–V MOSFETs; MOS Capacitance; high-κ;
Conference_Titel :
Indium Phosphide and Related Materials (IPRM), 2012 International Conference on
Conference_Location :
Santa Barbara, CA
Print_ISBN :
978-1-4673-1725-2
DOI :
10.1109/ICIPRM.2012.6403347
