Sulfur cleaning for (100), (111)A, and (111)B InGaAs surfaces with In content of 0.53 and 0.70 and their Al2O3/InGaAs MOS interface properties

Author

Yokoyama, Masafumi ; Taoka, Noriyuki ; Suzuki, Ryo ; Ichikawa, Osamu ; Yamada, Hiroyoshi ; Fukuhara, N. ; Hata, Masaharu ; Sugiyama, Masakazu ; Nakano, Yoshiaki ; Takenaka, Mitsuru ; Takagi, Shinichi

Author_Institution

Univ. of Tokyo, Tokyo, Japan

fYear

2012

fDate

27-30 Aug. 2012

Firstpage

167

Lastpage

170

Abstract

We have studied the impact of sulfur cleaning for (100), (111)A, and (111)B InGaAs surfaces with In content of 0.53 and 0.70 and their Al₂O₃/InGaAs MOS interfaces using an (NH₄)₂S_x solution. We found that the sulfur cleaning can effectively remove native oxides from InGaAs surfaces and passivate the InGaAs surfaces by sulfur atoms. Combining with trivalent oxide passivation using Al₂O₃, the Al₂O₃/InGaAs MOS interfaces with sulfur cleaning can realize good interface properties with the small frequency dispersion of the capacitance versus voltage (C - V) curves in accumulation region with independent of In content and the surface orientations.

Keywords

III-V semiconductors; MIS structures; aluminium compounds; gallium arsenide; indium compounds; passivation; surface cleaning; (100) InGaAs surfaces; (111)A InGaAs surfaces; (111)B InGaAs surfaces; Al₂O₃-InGaAs; C-V curves; InGaAs; MOS interface properties; capacitance-voltage curves; frequency dispersion; passivation; sulfur cleaning; Aluminum oxide; Cleaning; Dispersion; Indium gallium arsenide; Passivation; Voltage measurement; CMOS technology; Capacitors; III–V semiconductor materials; MOS devices; Semiconductor-insulator interfaces; surface engineering;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials (IPRM), 2012 International Conference on

Conference_Location

Santa Barbara, CA

ISSN

1092-8669

Print_ISBN

978-1-4673-1725-2

Type

conf

DOI

10.1109/ICIPRM.2012.6403348

Filename

6403348