Title :
Metal-organic vapor-phase epitaxy growth of InP-based HEMT structures with InGaAs/InAs composite channel
Author :
Sugiyama, H. ; Hoshi, T. ; Yokoyama, Haruki ; Matsuzaki, Hideaki
Author_Institution :
NTT Photonics Labs., NTT Corp., Atsugi, Japan
Abstract :
This paper reports the metal-organic vapor-phase epitaxy (MOVPE) growth of InP-based high electron mobility transistor (HEMT) structures with an InGaAs/InAs composite channel (CC). By optimizing the low-temperature growth conditions of the InGaAs/InAs CC, we obtained high-quality epiwafers with high electron mobility and a high-selectivity InP recess-etching-stopper layer. The mobilities exceed 18,000 cm2/Vs, which is comparable to the highest mobility ever reported for InP-based HEMT structures grown by molecular beam epitaxy (MBE). To our knowledge, this is the first report of MOVPE growth of InP-based HEMTs with an InGaAs/InAs CC.
Keywords :
III-V semiconductors; MOCVD; composite materials; etching; gallium arsenide; high electron mobility transistors; indium compounds; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; InP-InGaAs-InAs; InP-based HEMT structure; InP-based high electron mobility transistor structures; MBE; MOVPE; composite channel; high-quality epiwafers; high-selectivity InP recess-etching-stopper layer; low-temperature growth conditions; metal-organic vapor-phase epitaxy growth; molecular beam epitaxy; Epitaxial growth; Epitaxial layers; HEMTs; Indium gallium arsenide; Indium phosphide; Surface morphology; HEMT; InAs; InGaAs; MOVPE; composite channel; mobility;
Conference_Titel :
Indium Phosphide and Related Materials (IPRM), 2012 International Conference on
Conference_Location :
Santa Barbara, CA
Print_ISBN :
978-1-4673-1725-2
DOI :
10.1109/ICIPRM.2012.6403369
