Title :
Low-threshold operation of LCI-membrane-DFB lasers with Be-doped GaInAs contact layer
Author :
Futami, Mitsuaki ; Shindo, Takatoshi ; Doi, Kohei ; Amemiya, Tomohiro ; Nishiyama, Naoto ; Arai, Shigehisa
Author_Institution :
Dept. of Electr. & Electron. Eng., Tokyo Inst. of Technol., Tokyo, Japan
Abstract :
One of the promising candidates to solve a problem of a performance limitation of LSI is replacing electrical global wirings by on chip optical interconnections. We proposed and realized lateral-current-injection (LCI) type membrane DFB lasers for this purpose. In this paper, we report a new type LCI membrane DFB laser by introducing Be-doped GaInAs contact layer to the initial wafer structure so as to make simple fabrication of p-contact. As the result, a threshold current of as low as 3.8 mA, which was much lower than the previously reported value of 11 mA, was obtained for the stripe width of 1.5 μm and the cavity length of 250 μm.
Keywords :
III-V semiconductors; beryllium; distributed feedback lasers; gallium arsenide; indium compounds; laser cavity resonators; membranes; optical fabrication; quantum well lasers; GaInAs:Be; LCI-membrane-DFB lasers; LSI; cavity length; contact layer; current 3.8 mA; electrical global wirings; lateral-current-injection type membrane DFB lasers; low-threshold operation; on chip optical interconnections; p-contact fabrication; size 1.5 mum; size 250 mum; stripe width; threshold current; wafer structure; Distributed feedback devices; Indium phosphide; Threshold current; Vertical cavity surface emitting lasers; GaInAsP/InP; lateral current injection; membrane structure; quantum-well laser; semiconductor laser;
Conference_Titel :
Indium Phosphide and Related Materials (IPRM), 2012 International Conference on
Conference_Location :
Santa Barbara, CA
Print_ISBN :
978-1-4673-1725-2
DOI :
10.1109/ICIPRM.2012.6403379
