Low-threshold operation of LCI-membrane-DFB lasers with Be-doped GaInAs contact layer

Author

Futami, Mitsuaki ; Shindo, Takatoshi ; Doi, Kohei ; Amemiya, Tomohiro ; Nishiyama, Naoto ; Arai, Shigehisa

Author_Institution

Dept. of Electr. & Electron. Eng., Tokyo Inst. of Technol., Tokyo, Japan

fYear

2012

fDate

27-30 Aug. 2012

Firstpage

285

Lastpage

288

Abstract

One of the promising candidates to solve a problem of a performance limitation of LSI is replacing electrical global wirings by on chip optical interconnections. We proposed and realized lateral-current-injection (LCI) type membrane DFB lasers for this purpose. In this paper, we report a new type LCI membrane DFB laser by introducing Be-doped GaInAs contact layer to the initial wafer structure so as to make simple fabrication of p-contact. As the result, a threshold current of as low as 3.8 mA, which was much lower than the previously reported value of 11 mA, was obtained for the stripe width of 1.5 μm and the cavity length of 250 μm.

Keywords

III-V semiconductors; beryllium; distributed feedback lasers; gallium arsenide; indium compounds; laser cavity resonators; membranes; optical fabrication; quantum well lasers; GaInAs:Be; LCI-membrane-DFB lasers; LSI; cavity length; contact layer; current 3.8 mA; electrical global wirings; lateral-current-injection type membrane DFB lasers; low-threshold operation; on chip optical interconnections; p-contact fabrication; size 1.5 mum; size 250 mum; stripe width; threshold current; wafer structure; Distributed feedback devices; Indium phosphide; Threshold current; Vertical cavity surface emitting lasers; GaInAsP/InP; lateral current injection; membrane structure; quantum-well laser; semiconductor laser;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials (IPRM), 2012 International Conference on

Conference_Location

Santa Barbara, CA

ISSN

1092-8669

Print_ISBN

978-1-4673-1725-2

Type

conf

DOI

10.1109/ICIPRM.2012.6403379

Filename

6403379