High mobility p-n junction-less InGaAs-OI tri-gate nMOSFETs with metal source/drain for ultra-low-power CMOS applications

We have successfully fabricated InGaAs-OI tri-gate nMOSFETs, for the first time. The devices were depletion-type (p-n junction-less) nFETs with Fin-channel width (W_fin) down to 20 nm and had metal source/drain structures. It was experimentally demonstrated that W_fin scaling effectively improved cut-off properties at N_d up to 5 × 10¹⁸ cm^-3 and the electron mobility in the narrowest channel (W_fin = 20 nm) was about 3x higher than that of the inversion layer. It was also demonstrated that enhancement of In content from 53% to 70% leaded to 30% I_on enhancement without I_off degradation.