• DocumentCode
    588145
  • Title

    Sensing magnetic fields in any direction using FinFETs and L-gate FinFETs

  • Author

    Perin, A.L. ; Giacomini, Renato

  • Author_Institution
    Centro Univ. da FEI, São Bernardo do Campo, Brazil
  • fYear
    2012
  • fDate
    1-4 Oct. 2012
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    The best-explored integrated magnetic field sensors are built with planar IC technologies, which do not allow 3D sensing in standard fabrication processes due to their bi-dimensional nature. Unlike planar devices, FinFETs can be used to sense magnetic fields in any direction. This work proposes and evaluates the use of FinFETs as magnetic sensors. The sensibility of FinFET differential arrays to lateral and vertical magnetic fields is quantified. This work also proposes the L-shaped gate, to improve the sensor performance.
  • Keywords
    MOSFET; magnetic sensors; FinFET differential arrays; L-shaped gate FinFET; integrated magnetic field sensors; lateral magnetic fields; magnetic field sensing; planar IC technology; planar devices; standard fabrication process; vertical magnetic fields; FinFETs; Logic gates; Lorentz covariance; Magnetic fields; Magnetic sensors; Standards;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference (SOI), 2012 IEEE International
  • Conference_Location
    NAPA, CA
  • ISSN
    1078-621X
  • Print_ISBN
    978-1-4673-2690-2
  • Electronic_ISBN
    1078-621X
  • Type

    conf

  • DOI
    10.1109/SOI.2012.6404368
  • Filename
    6404368
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=588145