Title :
Sensing magnetic fields in any direction using FinFETs and L-gate FinFETs
Author :
Perin, A.L. ; Giacomini, Renato
Author_Institution :
Centro Univ. da FEI, São Bernardo do Campo, Brazil
Abstract :
The best-explored integrated magnetic field sensors are built with planar IC technologies, which do not allow 3D sensing in standard fabrication processes due to their bi-dimensional nature. Unlike planar devices, FinFETs can be used to sense magnetic fields in any direction. This work proposes and evaluates the use of FinFETs as magnetic sensors. The sensibility of FinFET differential arrays to lateral and vertical magnetic fields is quantified. This work also proposes the L-shaped gate, to improve the sensor performance.
Keywords :
MOSFET; magnetic sensors; FinFET differential arrays; L-shaped gate FinFET; integrated magnetic field sensors; lateral magnetic fields; magnetic field sensing; planar IC technology; planar devices; standard fabrication process; vertical magnetic fields; FinFETs; Logic gates; Lorentz covariance; Magnetic fields; Magnetic sensors; Standards;
Conference_Titel :
SOI Conference (SOI), 2012 IEEE International
Conference_Location :
NAPA, CA
Print_ISBN :
978-1-4673-2690-2
Electronic_ISBN :
1078-621X
DOI :
10.1109/SOI.2012.6404368
