Title :
Flexible Vth FinFETs with 9-nm-thick extremely-thin BOX
Author :
Endo, Kazuhiro ; Migita, S. ; Ishikawa, Yozo ; Liu, Yanbing ; Matsukawa, T. ; O´uchi, S. ; Tsukada, J. ; Mizubayashi, W. ; Morita, Yusuke ; Ota, Hiroyuki ; Yamauchi, Hiroyuki ; Masahara, M.
Author_Institution :
Adv. Ind. Sci. & Technol. (AIST), Tsukuba, Japan
Abstract :
For the first time, we have successfully fabricated the Vth controllable connected multigate FinFET on the world´s thinnest 9-nm-thick extremely thin (ET) BOX SOI substrate. It was experimentally demonstrated that, by controlling the back (substrate) bias, the Vth of the FinFET on the ETBOX is flexibly tuned from low Vth to high Vth with keeping low sub-threshold slope.
Keywords :
MOSFET; silicon-on-insulator; ET BOX SOI substrate; Si; flexible voltage FinFET; low subthreshold slope; size 9 nm; thick extremely-thin BOX; voltage controllable connected multigate FinFET; Capacitance; Fabrication; FinFETs; Logic gates; Substrates; Tin;
Conference_Titel :
SOI Conference (SOI), 2012 IEEE International
Conference_Location :
NAPA, CA
Print_ISBN :
978-1-4673-2690-2
Electronic_ISBN :
1078-621X
DOI :
10.1109/SOI.2012.6404371
