Cryogenic operation of double-gate FinFET and demonstration of analog circuit at 4.2K

Author

O´uchi, S. ; Endo, Kazuhiro ; Maezawa, M. ; Nakagawa, T. ; Ota, Hiroyuki ; Liu, Y.X. ; Matsukawa, T. ; Ishikawa, Yozo ; Tsukada, J. ; Yamauchi, Hiroyuki ; Mizubayashi, W. ; Migita, S. ; Morita, Yusuke ; Sekigawa, Toshihiro ; Koike, Hideaki ; Sakamoto, Kaz

Author_Institution

Nanoelectron. Res. Inst., Nat. Inst. of Adv. Ind. Sci. & Technol. (AIST), Tsukuba, Japan

fYear

2012

fDate

1-4 Oct. 2012

Firstpage

1

Lastpage

2

Abstract

Performance of a double-gate (DG) FinFET in the cryogenic environment is discussed based on measurements and simulation. It was found that the DG FinFET has an excellent immunity to the kink effect in the cryogenic environment. Our physics-based compact model reproduced the measured I-V characteristics. The successful demonstration of an opamp consisting of the DG FinFETs at 4.2 K is also presented.

Keywords

MOSFET; cryogenic electronics; semiconductor device models; DG FinFET; analog circuit demonstration; cryogenic environment; cryogenic operation; double-gate FinFET; kink effect; measured I-V characteristics; physics-based compact model; temperature 4.2 K; Cryogenics; Current measurement; FinFETs; Logic gates; Semiconductor device modeling; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference (SOI), 2012 IEEE International

Conference_Location

NAPA, CA

ISSN

1078-621X

Print_ISBN

978-1-4673-2690-2

Electronic_ISBN

1078-621X

Type

conf

DOI

10.1109/SOI.2012.6404376

Filename

6404376