• DocumentCode
    588151
  • Title

    Improving the accuracy of numerically controlled sacrificial plasma oxidation using array of electrodes to improve the thickness uniformity of SOI

  • Author

    Takei, H. ; Yoshinaga, Koji ; Sano, Yousuke ; Matsuyama, S. ; Yamauchi, Kazuto

  • Author_Institution
    Grad. Sch. of Eng., Osaka Univ., Suita, Japan
  • fYear
    2012
  • fDate
    1-4 Oct. 2012
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    The processing accuracy was improved by balancing out the wafer temperature using the cooling system and regulating the rf power by constantly measuring the electrode potential during processing.
  • Keywords
    MOSFET; cooling; electrodes; numerical control; oxidation; plasma applications; silicon-on-insulator; RF power; SOI; cooling system; electrode array; electrode potential; fully depleted SOI MOSFET; numerically controlled sacrificial plasma oxidation; thickness uniformity; wafer temperature; Arrays; Atmospheric measurements; Cooling; Electrodes; Oxidation; Plasmas; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference (SOI), 2012 IEEE International
  • Conference_Location
    NAPA, CA
  • ISSN
    1078-621X
  • Print_ISBN
    978-1-4673-2690-2
  • Electronic_ISBN
    1078-621X
  • Type

    conf

  • DOI
    10.1109/SOI.2012.6404382
  • Filename
    6404382
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=588151