Title :
X-band receiver module in fully depleted silicon on insulator technology
Author :
Mattamana, A. ; Groves, Keith ; Orlando, Pierangelo ; Patel, Vipul J. ; Quach, T. ; Watson, Paul ; Johnson, Luke ; Wyatt, P. ; Chen, C.L. ; Chen, C.K. ; Drangmeister, R. ; Keast, C.
Author_Institution :
Air Force Res. Lab., Wright-Patterson AFB, OH, USA
Abstract :
This paper reports on the successful demonstration of radio frequency (RF) components in support of an integrated wide band/high dynamic range X-band receiver in 180-nm fully-depleted (FD) SOI CMOS technology. The demonstrated microwave monolithic integrated circuit (MMIC) includes an X-band low noise amplifier (LNA), Marchand balun, balanced amplifiers, double balanced mixer, non-reflective filter, and an IF amplifier. The X-band receiver front end module yielded a gain of 13.5-15 dB, 5.2-5.8 dB noise figure (NF), across the frequency band (3.7-4.3 GHz).
Keywords :
CMOS integrated circuits; field effect MMIC; radio receivers; silicon-on-insulator; FD SOI CMOS technology; IF amplifier; LNA; MMIC; Marchand balun; RF components; X-band low noise amplifier; X-band receiver front end module; balanced amplifiers; double balanced mixer; frequency 3.7 GHz to 4.3 GHz; fully depleted silicon-on-insulator technology; fully-depleted SOI CMOS technology; gain 13.5 dB to 15 dB; high dynamic range X-band receiver module; integrated wideband X-band receiver; microwave monolithic integrated circuit; noise figure; noise figure 5.2 dB to 5.8 dB; nonreflective filter; radiofrequency components; size 180 nm; CMOS integrated circuits; Capacitors; Gain; Metals; Noise measurement; Radio frequency; Receivers; Balun; CMOS; FDSOI; Filter; Low Noise Amplifier; Mixer; RF receiver; Single Down Conversion;
Conference_Titel :
SOI Conference (SOI), 2012 IEEE International
Conference_Location :
NAPA, CA
Print_ISBN :
978-1-4673-2690-2
Electronic_ISBN :
1078-621X
DOI :
10.1109/SOI.2012.6404387
