Title :
Impact of back-gate bias on DC and RF characteristics in SiGe:C HBTs fabricated on thin-film SOI
Author :
Jing Chen ; Tao Yu ; Jiexin Luo ; Qingqing Wu ; Zhan Chai ; Xi Wang
Author_Institution :
Shanghai Inst. of Microsyst. & Inf. Technol., Shanghai, China
Abstract :
The influence of back-gate bias on DC and RF characteristics in C-doped SiGe HBTs (SiGe:C HBTs) on thin-film silicon-on-insulator (SOI) was investigated. The experimental result indicates that a positive substrate bias is very effective in RC and hysteresis reduction, and further improves the maximum fT from 16 to 53GHz. Analytical relationships are developed to quantify the impact of substrate bias on electrical characteristics, which further approved by calibrated Sentaurus simulations.
Keywords :
Ge-Si alloys; carbon; heterojunction bipolar transistors; microwave bipolar transistors; millimetre wave bipolar transistors; semiconductor materials; semiconductor thin films; silicon-on-insulator; DC characteristics; HBT; RF characteristics; SiGe:C; back-gate bias impact; calibrated Sentaurus simulations; electrical characteristics; frequency 16 GHz to 53 GHz; hysteresis reduction; positive substrate bias; thin-film SOI; thin-film silicon-on-insulator; Capacitance; Heterojunction bipolar transistors; Hysteresis; Integrated circuits; Radio frequency; Silicon germanium; Substrates;
Conference_Titel :
SOI Conference (SOI), 2012 IEEE International
Conference_Location :
NAPA, CA
Print_ISBN :
978-1-4673-2690-2
Electronic_ISBN :
1078-621X
DOI :
10.1109/SOI.2012.6404388
