DocumentCode
588159
Title
Physics and design of a SOI Field-Effect-Diode memory cell
Author
Ioannou, Dimitris E. ; Chbili, Zakariae ; Badwan, Ahmad Z. ; Li, Qifeng ; Yang, Yi ; Salman, Adnan Ahmed
Author_Institution
ECE Dept., George Mason Univ., Fairfax, VA, USA
fYear
2012
fDate
1-4 Oct. 2012
Firstpage
1
Lastpage
2
Abstract
A new family of well behaved memory cells based on the SOIFED has been described and their operation explained. Their operation relies on modifying the conductivity of the SOI film locally by suitably biasing the gates. They are easier to fabricate and their performance is excellent.
Keywords
field effect memory circuits; semiconductor diodes; semiconductor thin films; silicon-on-insulator; SOI field-effect-diode memory cell design; SOI film conductivity; SOIFED; Anodes; Cathodes; Educational institutions; Films; Logic gates; P-i-n diodes; Timing;
fLanguage
English
Publisher
ieee
Conference_Titel
SOI Conference (SOI), 2012 IEEE International
Conference_Location
NAPA, CA
ISSN
1078-621X
Print_ISBN
978-1-4673-2690-2
Electronic_ISBN
1078-621X
Type
conf
DOI
10.1109/SOI.2012.6404395
Filename
6404395
Link To Document