Title :
Physics and design of a SOI Field-Effect-Diode memory cell
Author :
Ioannou, Dimitris E. ; Chbili, Zakariae ; Badwan, Ahmad Z. ; Li, Qifeng ; Yang, Yi ; Salman, Adnan Ahmed
Author_Institution :
ECE Dept., George Mason Univ., Fairfax, VA, USA
Abstract :
A new family of well behaved memory cells based on the SOIFED has been described and their operation explained. Their operation relies on modifying the conductivity of the SOI film locally by suitably biasing the gates. They are easier to fabricate and their performance is excellent.
Keywords :
field effect memory circuits; semiconductor diodes; semiconductor thin films; silicon-on-insulator; SOI field-effect-diode memory cell design; SOI film conductivity; SOIFED; Anodes; Cathodes; Educational institutions; Films; Logic gates; P-i-n diodes; Timing;
Conference_Titel :
SOI Conference (SOI), 2012 IEEE International
Conference_Location :
NAPA, CA
Print_ISBN :
978-1-4673-2690-2
Electronic_ISBN :
1078-621X
DOI :
10.1109/SOI.2012.6404395
