A Double-Gate AlGaN/GaN HEMT With Improved Dynamic Performance

Author

Guohao Yu ; Yong Cai ; Yue Wang ; Zhihua Dong ; Chunhong Zeng ; Desheng Zhao ; Hua Qin ; Baoshun Zhang

Author_Institution

Key Lab. of Nanodevices & Applic., Suzhou Inst. of Nano-Tech & Nano-Bionics, Suzhou, China

Volume

34

Issue

6

fYear

2013

fDate

Jun-13

Firstpage

747

Lastpage

749

Abstract

In this letter, a double-gate AlGaN/GaN high electron mobility transistor operated in a synchronized switching mode is demonstrated, and improved dynamic performances are obtained. The additional gate sits on top of the conventional gate and stretches 2/4 μm to the source/drain electrodes, respectively. A positive voltage pulse is applied to the top gate and is synchronized with the ON-OFF switching pulse applied to the conventional gate. Such a double-gate driving method significantly improves the dynamic performances of the device. Moreover, it allows us to investigate the dynamic on-resistance in the drift region in detail.

Keywords

III-V semiconductors; electrodes; high electron mobility transistors; wide band gap semiconductors; AlGaN-GaN; double-gate HEMT; double-gate driving method; double-gate high electron mobility transistor; dynamic on-resistance; dynamic performance; on-off switching pulse; source-drain electrode; synchronized switching mode; AlGaN/GaN high electron mobility transistor (HEMT); dynamic performance; power device;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2013.2259213

Filename

6515605