Title :
Balanced InP/InGaAs Photodiodes With 1.5-W Output Power
Author :
Qiugui Zhou ; Cross, A.S. ; Yang Fu ; Beling, Andreas ; Foley, B.M. ; Hopkins, P.E. ; Campbell, Joe C.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Virginia, Charlottesville, VA, USA
Abstract :
We report InP/InGaAs modified unitraveling-carrier balanced photodiodes (PDs). The back-illuminated PDs were flip-chip bonded on diamond submounts for enhanced heat sinking. The device demonstrated a 3-dB bandwidth of 8 GHz and a 30-dB common-mode rejection ratio at frequencies of <; 10 GHz. High saturation current of > 320 mA, maximum output power of 31.7 dBm (1.5 W) into a 50-Ω load, and good linearity with a third-order intercept point of up to 47 dBm were measured at the 3-dB bandwidth frequency of 8 GHz.
Keywords :
III-V semiconductors; diamond; flip-chip devices; gallium arsenide; heat sinks; indium compounds; photodiodes; C; InP-InGaAs; back illuminated; diamond submounts; enhanced heat sinking; flip-chip bonded; frequency 8 GHz; power 1.5 W; unitraveling carrier balanced photodiodes; Bandwidth; Current measurement; Indium gallium arsenide; Indium phosphide; Photodiodes; Power amplifiers; Power generation; Photodiodes; photodetector;
Journal_Title :
Photonics Journal, IEEE
DOI :
10.1109/JPHOT.2013.2262672
