DocumentCode :
58926
Title :
Stability and Low-Frequency Noise in InAs NW Parallel-Array Thin-Film Transistors
Author :
Wahl, Richard E. ; Wang, F. ; Chung, Hugh E. ; Kunnen, G.R. ; Yip, SenPo ; Lee, E.H. ; Pun, E.Y.B. ; Raupp, Gregory B. ; Allee, D.R. ; Ho, Jonathan C.
Author_Institution :
Department of Electrical Engineering and Flexible Display Center, Arizona State University, Tempe, AZ, USA
Volume :
34
Issue :
6
fYear :
2013
fDate :
Jun-13
Firstpage :
765
Lastpage :
767
Abstract :
In this letter, we present the dc characteristics, stability, and low-frequency noise (LFN) measurements, for n-type indium arsenide nanowire (NW) parallel-array thin-film transistors (TFTs) with a global back gate. These devices perform with mobilities ranging from 200–1200 
and produce a threshold voltage shift less than 0.25 V after 10 000 
of stress. The resulting LFN measurements indicate that the 
noise can be modeled by the number fluctuation model, at low drain currents, which can provide an essential guideline for the device design considerations of NW TFTs.
Keywords :
InAs; low-frequency noise; nanowire (NW) parallel arrays; stability; thin-film transistors (TFTs);
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2013.2250896
Filename :
6515612
Link To Document :
