Title :
NP dynamic CMOS resurrection with carbon nanotube field effect transistors
Author :
Yanan Sun ; Kursun, V.
Author_Institution :
Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, China
Abstract :
Low-power, compact, and high-performance NP dynamic CMOS circuits implemented with a 16nm carbon nanotube transistor technology are presented in this paper. The performances of NP dynamic CMOS full adders based on 16nm carbon nanotube MOSFETs (CN-MOSFETs) and 16nm conventional silicon MOSFETs (Si-MOSFETs) are compared. The dynamic switching power consumption, the leakage power consumption, and the total area are reduced by 53.38%, 95.10%, and 68.96%, respectively, with the CN-MOSFET technology while providing similar propagation delay as compared to the Si-MOSFET NP dynamic CMOS full adder.
Keywords :
CMOS integrated circuits; MOSFET; adders; carbon nanotube field effect transistors; elemental semiconductors; silicon; CMOS full adders; CN-MOSFET; NP dynamic CMOS circuit; Si; Si-MOSFET; carbon nanotube MOSFET; carbon nanotube field effect transistor; dynamic switching power consumption; leakage power consumption; propagation delay; silicon MOSFET; size 16 nm; Adders; CMOS integrated circuits; CMOS technology; Carbon nanotubes; Logic gates; Power demand; Transistors; NP dynamic CMOS; carbon nanotube transistor technology; electron mobility; high performance; hole mobility; low power;
Conference_Titel :
SoC Design Conference (ISOCC), 2012 International
Conference_Location :
Jeju Island
Print_ISBN :
978-1-4673-2989-7
Electronic_ISBN :
978-1-4673-2988-0
DOI :
10.1109/ISOCC.2012.6406913
