DocumentCode
589493
Title
InP HBT voltage controlled oscillator for 300-GHz-band wireless communications
Author
Kim, Jae-young ; Ho-Jin Song ; Ajito, K. ; Yaita, Makoto ; Kukutsu, Naoya
Author_Institution
NTT Microsyst. Integration Labs., NTT Corp., Atsugi, Japan
fYear
2012
fDate
4-7 Nov. 2012
Firstpage
262
Lastpage
265
Abstract
We present a 300-GHz-band fundamental voltage controlled oscillator (VCO) for wireless communications using 0.25-μm InP HBT technology. The VCO exhibits about -2-dBm differential output power and 10-GHz frequency tuning range with dc power consumption of 46.2 mW. The oscillation frequency band of the VCO can be extended over 360 GHz in the same structure.
Keywords
III-V semiconductors; heterojunction bipolar transistors; indium compounds; voltage control; HBT voltage controlled oscillator; InP; dc power consumption; differential output power; frequency 300 GHz; oscillation frequency band; power 46.2 mW; size 0.25 mum; wireless communications; Frequency measurement; Heterojunction bipolar transistors; Indium phosphide; Loss measurement; Voltage-controlled oscillators; Wireless communication; 300 GHz; InP HBT MMIC; THz wireless communication; voltage controlled oscillator;
fLanguage
English
Publisher
ieee
Conference_Titel
SoC Design Conference (ISOCC), 2012 International
Conference_Location
Jeju Island
Print_ISBN
978-1-4673-2989-7
Electronic_ISBN
978-1-4673-2988-0
Type
conf
DOI
10.1109/ISOCC.2012.6407090
Filename
6407090
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