Title :
InP HBT voltage controlled oscillator for 300-GHz-band wireless communications
Author :
Kim, Jae-young ; Ho-Jin Song ; Ajito, K. ; Yaita, Makoto ; Kukutsu, Naoya
Author_Institution :
NTT Microsyst. Integration Labs., NTT Corp., Atsugi, Japan
Abstract :
We present a 300-GHz-band fundamental voltage controlled oscillator (VCO) for wireless communications using 0.25-μm InP HBT technology. The VCO exhibits about -2-dBm differential output power and 10-GHz frequency tuning range with dc power consumption of 46.2 mW. The oscillation frequency band of the VCO can be extended over 360 GHz in the same structure.
Keywords :
III-V semiconductors; heterojunction bipolar transistors; indium compounds; voltage control; HBT voltage controlled oscillator; InP; dc power consumption; differential output power; frequency 300 GHz; oscillation frequency band; power 46.2 mW; size 0.25 mum; wireless communications; Frequency measurement; Heterojunction bipolar transistors; Indium phosphide; Loss measurement; Voltage-controlled oscillators; Wireless communication; 300 GHz; InP HBT MMIC; THz wireless communication; voltage controlled oscillator;
Conference_Titel :
SoC Design Conference (ISOCC), 2012 International
Conference_Location :
Jeju Island
Print_ISBN :
978-1-4673-2989-7
Electronic_ISBN :
978-1-4673-2988-0
DOI :
10.1109/ISOCC.2012.6407090
