Title :
Circuit design for carbon nanotube field effect transistors
Author :
Haiqing Nan ; Wei Wang ; Ken Choi
Author_Institution :
Logic & Phys. Synthesis Dept., Intel Mobile Commun., China
Abstract :
Carbon nanotube field-effect transistors (CNFETs) and more recently graphene FETs are currently being researched as a replacement of CMOS in the near future due to their physical characteristics such as achievable current density, high speed, high-K compatibility, chemical stability, and low short channel effects. Historically, we have seen many cases that new devices disappeared because of the lack of design methodology for large scale integration (LSI). In this tutorial paper, we introduce circuit integration schemes by using CNFETs for future LSI design.
Keywords :
CMOS integrated circuits; carbon nanotube field effect transistors; current density; integrated circuit design; large scale integration; logic design; C; CMOS technology; carbon nanotube field effect transistors; chemical stability; current density; graphene FET; large scale integration; logic design; short channel effects; CNTFETs; Delay; Logic gates; Silicon; Carbon nanotube FET; Digital Circuits; Low power design;
Conference_Titel :
SoC Design Conference (ISOCC), 2012 International
Conference_Location :
Jeju Island
Print_ISBN :
978-1-4673-2989-7
Electronic_ISBN :
978-1-4673-2988-0
DOI :
10.1109/ISOCC.2012.6407113
