Title :
Thickness dependent evolution of microstructure and magnetic properties of L10 (001) FePt films grown on TiN intermediate layer
Author :
Li, Hai Helen ; Dong, K.F. ; Hu, Jiang Feng ; Zhou, Tie Jun ; Chow, G.M. ; Chen, Jim S.
Author_Institution :
Dept. of Mater. Sci. & Eng., Nat. Univ. of Singapore, Singapore, Singapore
fDate :
Oct. 31 2012-Nov. 2 2012
Abstract :
The evolution of the microstructure and magnetic properties of FePt films with different thicknesses fabricated by dc magnetron sputtering on TiN intermediate layer were investigated. MFM results showed that the magnetization reversal mechanism changed from Stoner-Wohlfarth rotation to domain wall motion with increasing film thickness. SEM and TEM images revealed that the morphologies of the films evolved from island particle to maze-like grains and then continuous films with the increase of the FePt film thickness. The critical thickness for FePt/TiN epitaxial growth was estimated to be 10 nm by lattice constant simulation and TEM measurement. The lattice relaxation in the FePt film of 40 nm was determined by high-resolution TEM images.
Keywords :
epitaxial growth; iron alloys; lattice constants; magnetic domain walls; magnetic epitaxial layers; magnetic force microscopy; magnetic relaxation; magnetisation reversal; metallic epitaxial layers; platinum alloys; scanning electron microscopy; sputter deposition; transmission electron microscopy; FePt-TiN; L10 (001) FePt film growth; MFM; SEM images; Stoner-Wohlfarth rotation; TEM measurement; TiN; TiN intermediate layer; continuous films; dc magnetron sputtering; domain wall motion; epitaxial growth; film morphology; film thickness dependent evolution; high-resolution TEM images; island particle; lattice constant simulation; lattice relaxation; magnetic properties; magnetization reversal mechanism; maze-like grains; microstructures; size 40 nm; Films; Magnetic properties; Magnetic resonance imaging; Magnetization reversal; Morphology; Sputtering; Tin; FePt; Thickness evolution; TiN;
Conference_Titel :
APMRC, 2012 Digest
Conference_Location :
Singapore
Print_ISBN :
978-1-4673-4734-1
