Thickness dependent evolution of microstructure and magnetic properties of L10 (001) FePt films grown on TiN intermediate layer

Author

Li, Hai Helen ; Dong, K.F. ; Hu, Jiang Feng ; Zhou, Tie Jun ; Chow, G.M. ; Chen, Jim S.

Author_Institution

Dept. of Mater. Sci. & Eng., Nat. Univ. of Singapore, Singapore, Singapore

fYear

2012

fDate

Oct. 31 2012-Nov. 2 2012

Firstpage

1

Lastpage

2

Abstract

The evolution of the microstructure and magnetic properties of FePt films with different thicknesses fabricated by dc magnetron sputtering on TiN intermediate layer were investigated. MFM results showed that the magnetization reversal mechanism changed from Stoner-Wohlfarth rotation to domain wall motion with increasing film thickness. SEM and TEM images revealed that the morphologies of the films evolved from island particle to maze-like grains and then continuous films with the increase of the FePt film thickness. The critical thickness for FePt/TiN epitaxial growth was estimated to be 10 nm by lattice constant simulation and TEM measurement. The lattice relaxation in the FePt film of 40 nm was determined by high-resolution TEM images.

Keywords

epitaxial growth; iron alloys; lattice constants; magnetic domain walls; magnetic epitaxial layers; magnetic force microscopy; magnetic relaxation; magnetisation reversal; metallic epitaxial layers; platinum alloys; scanning electron microscopy; sputter deposition; transmission electron microscopy; FePt-TiN; L10 (001) FePt film growth; MFM; SEM images; Stoner-Wohlfarth rotation; TEM measurement; TiN; TiN intermediate layer; continuous films; dc magnetron sputtering; domain wall motion; epitaxial growth; film morphology; film thickness dependent evolution; high-resolution TEM images; island particle; lattice constant simulation; lattice relaxation; magnetic properties; magnetization reversal mechanism; maze-like grains; microstructures; size 40 nm; Films; Magnetic properties; Magnetic resonance imaging; Magnetization reversal; Morphology; Sputtering; Tin; FePt; Thickness evolution; TiN;

fLanguage

English

Publisher

ieee

Conference_Titel

APMRC, 2012 Digest

Conference_Location

Singapore

Print_ISBN

978-1-4673-4734-1

Type

conf

Filename

6407603