DocumentCode :
58972
Title :
540-meV Hole Activation Energy for GaSb/GaAs Quantum Dot Memory Structure Using AlGaAs Barrier
Author :
Cui, K. ; Ma, Wann-Jiun ; Zhang, Ye ; Huang, Jie ; Wei, Y. ; Cao, Yijia ; Guo, Xuemei ; Li, Qifeng
Author_Institution :
Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China
Volume :
34
Issue :
6
fYear :
2013
fDate :
Jun-13
Firstpage :
759
Lastpage :
761
Abstract :
We report on a memory structure that only makes use of holes as the storage charges based on type-II GaSb/GaAs quantum dots (QDs) using an AlGaAs barrier. The 
measurements confirm existence of quantum states in the GaSb dots and reveal the applied bias voltage range for the write/erase process by charging/discharging the QDs. A large hole activation energy value of 540 meV is obtained for the device measured by deep level transient spectroscopy. Our results indicate that type-II GaSb/GaAs QD system is a promising candidate for future memory devices.
Keywords :
Barrier confinement; GaSb/GaAs; quantum dot memory; thermal activation energy;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2013.2258135
Filename :
6515616
Link To Document :
