Title :
InP HBT Thermal Management by Transferring to High Thermal Conductivity Silicon Substrate
Author :
Thiam, Arame ; Roelens, Yannick ; Coinon, Christophe ; Avramovic, Vanessa ; Grandchamp, B. ; Ducatteau, Damien ; Wallart, Xavier ; Maneux, Cristell ; Zaknoune, Mohammed
Author_Institution :
Inst. of Electron., Microelectron. & Nanotechnol., Univ. of Lille, Villeneuve d´Ascq, France
Abstract :
We report about the self-heating management of an InP double heterojunction bipolar transistor (DHBT) by the way of the thermal resistance. In order to reduce this latter, an AlInP/GaAsSb DHBT has been transferred on a silicon substrate offering a high thermal conductivity. According to our thermal resistance measurements on a 0.8 × 6 μm2 DHBT, a low thermal resistance of 1625 K/W is obtained, 65 % lower than for the same device fabricated on its own substrate of InP and which exhibited a value of 4452 K/W.
Keywords :
III-V semiconductors; aluminium compounds; elemental semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; silicon; thermal conductivity; thermal resistance; AlInP-GaAsSb; DHBT; HBT thermal management; Si; double heterojunction bipolar transistor; high-thermal conductivity silicon substrate; self-heating management; thermal resistance measurements; Conductivity; Indium phosphide; Silicon; Substrates; Thermal conductivity; Thermal resistance; DHBT; Self heating; high thermal conductivity; thermal resistance; transferred-substrate;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2014.2347256
