Title : 
Full-controlled devices and SCR consisting of the mixed H bridge switch circuit
         
        
        
            Author_Institution : 
PLA Inf. Eng. Univ., Zhengzhou, China
         
        
        
        
        
        
            Abstract : 
Usually the H bridge switch circuits of four power switches are all the full-controlled devices, where two of them are the low-end switched and two as the high-end switches. The low-end switch driver is simpler, and the high-end switch driver is relatively complicated. In this paper, a kind of use full-controlled devices and SCR consists of a mix of H bridge switch circuit was presented, in which, the low-end switches use full-controlled devices, high-end switches use SCR. Using SCR conductive self-locking characteristics, this H bridge switch circuit can make the high-end switch driver also became very simple, so simplify the H bridge driving circuit.
         
        
            Keywords : 
driver circuits; power semiconductor switches; thyristors; H-bridge driving circuit; SCR; SCR conductive self-locking characteristics; full-controlled devices; high-end switches; low-end switch driver; mixed H bridge switch circuit; power switches; Bridge circuits; MOSFET circuits; Switches; Switching circuits; Thyristors; Voltage control; H bridge switch circuit full-controlled devices; SCR; thyristor;
         
        
        
        
            Conference_Titel : 
Antennas, Propagation & EM Theory (ISAPE), 2012 10th International Symposium on
         
        
            Conference_Location : 
Xian
         
        
            Print_ISBN : 
978-1-4673-1799-3
         
        
        
            DOI : 
10.1109/ISAPE.2012.6409010