Title :
Implementation of unipolar inverter based on spatial wave-function switched FET (SWSFET)
Author :
Karmakar, Sanjay ; Chandy, John A. ; Jain, Faquir C.
Author_Institution :
Intel Corp., Hillsboro, OR, USA
Abstract :
The spatial wave-function switched field effect transistor (SWSFET) has two or three low band-gap quantum well channels that can conduct carrier flow from source to drain of the SWSFET. Because of this property, SWSFETs are useful to implement different multi-valued logic with reduced device count. In this work, we introduce the circuit model of a SWSFET and the design of a unipolar inverter where only one kind of charge carrier contributes to the current flow.
Keywords :
field effect transistors; invertors; multivalued logic; semiconductor device models; semiconductor quantum wells; SWSFET; SWSFET circuit model; low band-gap quantum well channels; multivalued logic; reduced device count; spatial wave-function switched FET; spatial wave-function switched field effect transistor; unipolar inverter design; FETs; Integrated circuit modeling; Inverters; Logic gates; Resonant tunneling devices; Switches; SWSFETs; multi-channel FETs; unipolar inverters;
Conference_Titel :
Lester Eastman Conference on High Performance Devices (LEC), 2012
Conference_Location :
Singapore
Print_ISBN :
978-1-4673-2298-0
Electronic_ISBN :
978-1-4673-2300-0
DOI :
10.1109/lec.2012.6410970
