Title :
Photoconductive enhancement effects of graphene quantum dots on ZnO nanoparticle photodetectors
Author :
Dali Shao ; Sawyer, S. ; Tao Hu ; Mingpeng Yu ; Jie Lian
Author_Institution :
Electr., Comput., & Syst. Eng. Dept., Rensselaer Polytech. Inst., Troy, NY, USA
Abstract :
Graphene quantum dots (GQDs) are a new class of zero dimensional carbon materials and have fascinating optical and electric properties. Many different methods for GQDs synthesize have been reported and GQDs have been proved very promising for biomedical imaging and photovoltaics applications. In order to further investigate the application of GQDs, here we report solution processable ultraviolet (UV) photodetector fabricated from ZnO nanoparticles (NPs) and from GQDs synthesized from hydrothermal method. The photodetector employing GQDs showed enhanced photoresponsivity and improved transient response. These improvements are explained by referring to the energy band diagram of the interfacial region of ZnO NPs and GQDs. The GQDs in this work demonstrated high potential for solution processable optoelectronics.
Keywords :
II-VI semiconductors; graphene; nanofabrication; nanoparticles; nanosensors; optical materials; photodetectors; semiconductor quantum dots; transient response; ultraviolet detectors; wide band gap semiconductors; zinc compounds; GQD; NP; UV; ZnO-C; biomedical imaging; electric property; energy band diagram; graphene quantum dot; hydrothermal method; interfacial region; nanoparticle photodetector; optical property; photoconductive enhancement effect; photoresponsivity; photovoltaics application; solution processable optoelectronics; solution processable ultraviolet photodetector; transient response; zero dimensional carbon material; Graphene; Nanoparticles; Photodetectors; Photovoltaic systems; Quantum dots; Surface treatment; Zinc oxide; Graphene quantum dots; UV photodetector; ZnO nanoparticles;
Conference_Titel :
Lester Eastman Conference on High Performance Devices (LEC), 2012
Conference_Location :
Singapore
Print_ISBN :
978-1-4673-2298-0
Electronic_ISBN :
978-1-4673-2300-0
DOI :
10.1109/lec.2012.6410972