DC breakdown and TDDB study of ALD SiO2 on GaN

Author

Takashima, Sachio ; Zhongda Li ; Chow, T.P.

Author_Institution

Center for Integrated Electron., Rensselaer Polytech. Inst., Troy, NY, USA

fYear

2012

fDate

7-9 Aug. 2012

Firstpage

1

Lastpage

4

Abstract

Dielectric and MOS interface properties of SiO₂ deposited with atomic layer deposition (ALD) on GaN with several surface treatment and oxide structures have been investigated via DC measurements. ALD SiO₂ on dry etch + NaOH-treated GaN surface exhibited higher breakdown voltage with small distribution, larger barrier height characteristic, and higher charge to breakdown characteristics when compared with un-etched surface condition and dry + TMAH wet etched surface condition, demonstrating the usability of NaOH post-etching treatment. Comparison was also made to a composite oxide of SiO₂/Al₂O₃/SiO₂, showing different trap-related leakage conduction.

Keywords

III-V semiconductors; MOS capacitors; aluminium; atomic layer epitaxial growth; electric breakdown; electrical conductivity; etching; gallium compounds; silicon compounds; wide band gap semiconductors; Al-SiO₂-GaN; DC breakdown; MOS interface properties; atomic layer deposition; barrier height; breakdown voltage; dielectric properties; dry etched surface; oxide structure; post-etching treatment; surface treatment; time dependent dielectric breakdown study; trap-related leakage conduction; un-etched surface; wet etched surface; Aluminum oxide; Capacitors; Electric breakdown; Electric fields; Gallium nitride; Reliability; Surface treatment; GaN; MOS; SiO2; TDDB; barrier height; breakdown;

fLanguage

English

Publisher

ieee

Conference_Titel

Lester Eastman Conference on High Performance Devices (LEC), 2012

Conference_Location

Singapore

Print_ISBN

978-1-4673-2298-0

Electronic_ISBN

978-1-4673-2300-0

Type

conf

DOI

10.1109/lec.2012.6410987

Filename

6410987