Title :
a-Plane GaN light emitting diodes on self-assembled Ni nano-islands
Author :
Xiaoli Wang ; Wenting Hou ; Liang Zhao ; Shi You ; Detchprohm, Theeradetch ; Wetzel, Christian
Author_Institution :
Dept. of Phys., Appl. Phys., & Astron., Rensselaer Polytech. Inst., Troy, NY, USA
Abstract :
This paper demonstrated the improvement of the crystalline quality of re-grown a-GaN on GaN nanorod templates and employed these templates for re-grown blue and green a-plane GaN LED structures. The partial light output power of nano-patterned a-plane GaN LED and low dislocation-density bulk a-plane GaN LED are almost the same for similar wavelengths at a current density of 12.7 A/cm2.
Keywords :
III-V semiconductors; current density; dislocation density; gallium compounds; light emitting diodes; nanofabrication; nanopatterning; nanorods; self-assembly; semiconductor growth; wide band gap semiconductors; GaN; GaN-GaN; Ni; a-plane light emitting diodes; blue a-plane LED structure; crystalline quality; current density; green a-plane LED structure; low-dislocation-density bulk a-plane LED; nanopatterned a-plane LED; nanorod template regrowth; partial light output power; self-assembled nanoislands; Films; Gallium nitride; Light emitting diodes; Nickel; Power generation; Scanning electron microscopy; Substrates;
Conference_Titel :
Lester Eastman Conference on High Performance Devices (LEC), 2012
Conference_Location :
Singapore
Print_ISBN :
978-1-4673-2298-0
Electronic_ISBN :
978-1-4673-2300-0
DOI :
10.1109/lec.2012.6410990
