InGaZnO Thin-Film Transistors Modified by Self-Assembled Monolayer With Different Alkyl Chain Length

Author

Peng Xiao ; Linfeng Lan ; Ting Dong ; Zhenguo Lin ; Sheng Sun ; Wei Song ; Junbiao Peng

Author_Institution

State Key Lab. of Luminescent Mater. & Devices, South China Univ. of Technol., Guangzhou, China

Volume

36

Issue

7

fYear

2015

fDate

Jul-15

Firstpage

687

Lastpage

689

Abstract

InGaZnO (IGZO) thin-film transistors (TFTs) modified by self-assembled monolayers (SAMs) based on triethoxysilane (TES) with three different alkyl chain lengths were fabricated and the relationship between the SAM chain length and the TFT electrical properties was investigated. The mobility increased and the hysteresis of transfer curves was reduced after SAM-modification, owing to less adsorption/ desorption effect on the IGZO surface. IGZO-TFTs modified by TES with longer alkyl chain lengths exhibited better electrical performance, which was attributed to the formation of a more hydrophobic and higher ordered monolayer due to the cohesive interaction between the molecules.

Keywords

II-VI semiconductors; adsorption; desorption; gallium compounds; hydrophobicity; indium compounds; monolayers; self-assembly; thin film transistors; zinc compounds; InGaZnO; adsorption; alkyl chain length; alkyl chain lengths; cohesive interaction; desorption; electrical properties; hysteresis; mobility; self-assembled monolayer; thin-film transistors; transfer curves; triethoxysilane; Hysteresis; Logic gates; Object recognition; Passivation; Stress; Thin film transistors; IGZO; Thin film transistors; modification; self-assembled monolayer; thin film transistors;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2015.2431741

Filename

7105363