DocumentCode :
590444
Title :
Ethanol sensing characteristics of sensors based on ZnO:Al nanostructures prepared by thermal oxidation
Author :
Choopun, S. ; Wongratanaphisan, D. ; Gardchareon, A. ; Wongrat, E.
Author_Institution :
Dept. of Phys. & Mater. Sci., Chiang Mai Univ., Chiang Mai, Thailand
fYear :
2012
fDate :
28-31 Oct. 2012
Firstpage :
1
Lastpage :
4
Abstract :
ZnO and ZnO:Al nanostructure were synthesized and fabricated as ethanol gas sensors. For FE-SEM images, the diameter and length measured at the middle of the wire-like structure were in range of 100-500 nm and several micrometers, respectively. From TEM analysis, it was suggested that the ZnO:Al nanostructure grew along (112̅0) direction on [0001] plane. The Raman spectra of ZnO and ZnO:Al nanostructures can confirm existence of defect effects due to oxygen vacancies and Zn interstitials of ZnO. Besides, it also suggested that the ZnO:Al nanostructures had (112̅0) direction perpendicular to the surface. The ethanol sensors based on ZnO:Al nanostructure sensors can be improved when compare with pure ZnO nanostructure sensor at the ethanol concentrations of 50-1000 ppm. The highest sensitivity of 32 was obtained in ZnO:Al nanostructure sensors with Al 1% by mol compared to 14 of pure ZnO nanostructure sensor at optimum temperature of 300°C. The sensitivity improvement of ZnO:Al sensors can be explained by an increase of oxygen vacancy-related defects which increase the surface depletion layer width as described in sensitivity equation. The larger surface depletion layer width results in higher the potential barrier height at the contacts and finally, sensitivity improvement.
Keywords :
II-VI semiconductors; aluminium; field emission electron microscopy; gas sensors; nanofabrication; nanosensors; organic compounds; oxidation; scanning electron microscopy; transmission electron microscopy; wide band gap semiconductors; zinc compounds; FE-SEM images; TEM analysis; ZnO:Al; ethanol concentrations; ethanol gas sensor characteristics; nanostructure sensors; oxygen vacancies; oxygen vacancy-related defects; size 100 nm to 500 nm; surface depletion layer; temperature 300 degC; thermal oxidation; wire-like structure; Ethanol; Nanostructures; Sensitivity; Sensor phenomena and characterization; Temperature sensors; Zinc oxide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Sensors, 2012 IEEE
Conference_Location :
Taipei
ISSN :
1930-0395
Print_ISBN :
978-1-4577-1766-6
Electronic_ISBN :
1930-0395
Type :
conf
DOI :
10.1109/ICSENS.2012.6411238
Filename :
6411238
Link To Document :
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