A memory and computation efficient three-dimensional simulation system for the UV lithography of thick SU-8 photoresists

Author

Zai-Fa Zhou ; Li-Li Shi ; Qing-An Huang ; Heng Zhang ; Wei-Hua Li ; Dang Wu ; Qian Yu

Author_Institution

Key Lab. of MEMS of Minist. of Educ., Southeast Univ., Nanjing, China

fYear

2012

fDate

28-31 Oct. 2012

Firstpage

1

Lastpage

4

Abstract

This paper presents a memory and computation efficient three dimensional simulation system for the ultraviolet (UV) lithography process of thick SU-8. The simulation system is developed based on a novel fast marching method based on full hash table. To investigate the simulation system, some simulations under different lithography conditions have been conducted by this system, using various simulation grid arrays. The corresponding experiments have been implemented to verify the simulation results, and all studies are carried out on SU-8 2075 under UV source with 365nm (2.6mW/cm²) radiation. The simulated development profiles demonstrate to be in agreement with the experimental results, and the memory usage during the lithography simulations has been reduced by about 60%, compared with current approaches.

Keywords

photoresists; ultraviolet lithography; ultraviolet sources; UV lithography process; UV source; fast marching method; full hash table; simulation grid array; thick SU-8 207 photoresist; three-dimensional simulation system; ultraviolet lithography process; wavelength 365 nm; Computational modeling; Heuristic algorithms; Lithography; Mathematical model; Resists; Semiconductor device modeling; Solid modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Sensors, 2012 IEEE

Conference_Location

Taipei

ISSN

1930-0395

Print_ISBN

978-1-4577-1766-6

Electronic_ISBN

1930-0395

Type

conf

DOI

10.1109/ICSENS.2012.6411260

Filename

6411260