A memory and computation efficient three-dimensional simulation system for the UV lithography of thick SU-8 photoresists

This paper presents a memory and computation efficient three dimensional simulation system for the ultraviolet (UV) lithography process of thick SU-8. The simulation system is developed based on a novel fast marching method based on full hash table. To investigate the simulation system, some simulations under different lithography conditions have been conducted by this system, using various simulation grid arrays. The corresponding experiments have been implemented to verify the simulation results, and all studies are carried out on SU-8 2075 under UV source with 365nm (2.6mW/cm²) radiation. The simulated development profiles demonstrate to be in agreement with the experimental results, and the memory usage during the lithography simulations has been reduced by about 60%, compared with current approaches.