Title :
Linear CMOS image sensor with time-delay integration and interlaced super-resolution pixel
Author :
Jui-Hsin Chang ; Kuo-Wei Cheng ; Chih-Cheng Hsieh ; Wen-Hsu Chang ; Hann-Huei Tsai ; Chin-Fong Chiu
Author_Institution :
Dept. of Electr. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan
Abstract :
This paper presents a high frame rate linear scan CMOS image sensor (CIS) with time-delay integration (TDI) technique and interlaced super-resolution (ISR) pixel to increase signal-to-noise ratio (SNR) and horizontal resolution. An adjacent pixel signal transfer (APST) methodology is adopted for efficient wire routing and reducing pixel complexity. 4T-APS is applied in pixel to achieve the snapshot function. A 128×8×2 interlaced super-resolution pixel array with a pitch of 6×6 um2, a fill factor of 26.99%, and 3.3V operation has been designed and fabricated in 0.18-um TSMC 1P6M CIS technology. Two 128×8 linear array are placed in an interlaced form with a half-pixel-pitch shift to achieve the super-resolution output. The measurement results of proposed linear scan sensor with 8 TDI stages and ISR technique demonstrate a SNR improvement of 10.3 dB, double horizontal resolution, and a power dissipation of 4.114uW per column at 1.6kfps.
Keywords :
CMOS image sensors; 4T-APS; APST methodology; ISR pixel; SNR; TSMC 1P6M CIS technology; adjacent pixel signal transfer methodology; half-pixel-pitch shift; high frame rate linear scan CIS; high frame rate linear scan CMOS image sensor; interlaced super-resolution pixel; interlaced super-resolution pixel array; linear scan sensor; power 4.114 muW; power dissipation; signal-to-noise ratio; size 0.018 mum; time-delay integration; voltage 3.3 V; Arrays; CMOS image sensors; Image resolution; Interpolation; Signal resolution; Signal to noise ratio;
Conference_Titel :
Sensors, 2012 IEEE
Conference_Location :
Taipei
Print_ISBN :
978-1-4577-1766-6
Electronic_ISBN :
1930-0395
DOI :
10.1109/ICSENS.2012.6411292