DocumentCode :
590482
Title :
Selective hydrogen detection of Pd/AlGaN/GaN HEMT-type sensors by temperature sweep operation
Author :
Watanabe, Atsuyori ; Nakamura, Shigenari ; Okumura, Takashi
Author_Institution :
Dept. of Electr. & Electron. Eng., Tokyo Metropolitan Univ., Hachioji, Japan
fYear :
2012
fDate :
28-31 Oct. 2012
Firstpage :
1
Lastpage :
4
Abstract :
We have demonstrated the selective hydrogen gas detection of Pd/AlGaN/GaN high electron mobility transistors-based hydrogen sensors by the temperature sweep operation. The sensitivity-temperature spectra of the Pd/AlGaN/GaN HEMT hydrogen sensors in the range of 30°C to 350°C were measured in hydrogen, methane and propane with various concentrations of diluted with nitrogen. It is found that the different gases have the characteristic sensitivity-temperature spectra with the different peak positions, which is due to the decomposition temperature of each gas. The maximum sensitivities to hydrogen and propane are obtained at about 230°C and 310°C, respectively. The temperature sweep detection is very useful technique for the selective gas detection for the Pd/AlGaN/GaN HEMT-based gas sensors.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; gas sensors; high electron mobility transistors; palladium; wide band gap semiconductors; HEMT-type sensors; Pd-AlGaN-GaN; maximum sensitivities; methane; propane; selective hydrogen detection; selective hydrogen gas detection; temperature 30 C to 350 C; temperature sweep detection; temperature sweep operation; Aluminum gallium nitride; Gallium nitride; Gas detectors; Hydrogen; Sensor phenomena and characterization; Temperature sensors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Sensors, 2012 IEEE
Conference_Location :
Taipei
ISSN :
1930-0395
Print_ISBN :
978-1-4577-1766-6
Electronic_ISBN :
1930-0395
Type :
conf
DOI :
10.1109/ICSENS.2012.6411311
Filename :
6411311
Link To Document :
بازگشت