• DocumentCode
    590494
  • Title

    A low-actuation voltage design for RF CMOS-MEMS switches

  • Author

    Horng-Hsiang Lai ; Wen-Chien Chen ; Sheng-Shian Li

  • Author_Institution
    Dept. of Power Mech. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan
  • fYear
    2012
  • fDate
    28-31 Oct. 2012
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    A switch-based micromechanical actuator fabricated using a foundry-oriented CMOS-MEMS platform has been demonstrated with low actuation voltages via the pull-in aided frame design. With such a two-stage mechanical design, the actuation voltage of the proposed actuator has been reduced by 35% as compared to that of the conventional single-stage counterpart with the same off-state gap spacing while the switch structure of this work still preserves similar switching time (i.e., relatively the same fundamental resonance frequency). The switch design methodology and foundry-type fabrication technology is expected to bring mechanical on/off switching capability into high-Q CMOS-MEMS circuits for future multimode, multi-band wireless communication systems.
  • Keywords
    CMOS integrated circuits; microactuators; microfabrication; microswitches; radiocommunication; RF CMOS-MEMS switch; foundry type fabrication technology; mechanical design; mechanical on-off switching; multiband wireless communication system; multimode communication; off-state gap spacing; pull-in aided frame design; switch-based micromechanical actuator; Actuators; Electrodes; Electrostatics; Force; Resonant frequency; Switches; Switching circuits;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Sensors, 2012 IEEE
  • Conference_Location
    Taipei
  • ISSN
    1930-0395
  • Print_ISBN
    978-1-4577-1766-6
  • Electronic_ISBN
    1930-0395
  • Type

    conf

  • DOI
    10.1109/ICSENS.2012.6411335
  • Filename
    6411335